Design and fabrication of RF MEMS switch by CMOS process

機構典藏 > College of Engineering > Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering > Journal Article > Item 987654321/65291

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Title:	Design and fabrication of RF MEMS switch by CMOS process
Authors:	Wu, C.C.
Contributors:	淡江大學機械與機電工程學系
Keywords:	CMOS;Post-process;MEMS;RF Switch
Date:	2005-04-01
Issue Date:	2011-10-20 21:37:37 (UTC+8)
Abstract:	This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of the RF switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, silox vapox Ⅲ, to etch oxide layer to release the suspended membrane and springs. Experiment results show that the pull-in voltage of the switch is about 17 V. The insertion loss and return loss in the range of 10 to 40 GHz are -2.5 dB and -13 dB, respectively.
Relation:	Tamkang Journal of Science and Engineering8(3), pp.197-202
DOI:	10.6180/jase.2005.8.3.03
Appears in Collections:	[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article

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