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    題名: Design and fabrication of RF MEMS switch by CMOS process
    作者: Wu, C.C.
    貢獻者: 淡江大學機械與機電工程學系
    關鍵詞: CMOS;Post-process;MEMS;RF Switch
    日期: 2005-04
    上傳時間: 2011-10-20 21:37:37 (UTC+8)
    摘要: This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of the RF switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, silox vapox Ⅲ, to etch oxide layer to release the suspended membrane and springs. Experiment results show that the pull-in voltage of the switch is about 17 V. The insertion loss and return loss in the range of 10 to 40 GHz are -2.5 dB and -13 dB, respectively.
    關聯: Tamkang Journal of Science and Engineering8(3), pp.197-202
    DOI: 10.6180/jase.2005.8.3.03
    顯示於類別:[機械與機電工程學系暨研究所] 期刊論文

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