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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/65291

    Title: Design and fabrication of RF MEMS switch by CMOS process
    Authors: Wu, C.C.
    Contributors: 淡江大學機械與機電工程學系
    Keywords: CMOS;Post-process;MEMS;RF Switch
    Date: 2005-04-01
    Issue Date: 2011-10-20 21:37:37 (UTC+8)
    Abstract: This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of the RF switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, silox vapox Ⅲ, to etch oxide layer to release the suspended membrane and springs. Experiment results show that the pull-in voltage of the switch is about 17 V. The insertion loss and return loss in the range of 10 to 40 GHz are -2.5 dB and -13 dB, respectively.
    Relation: Tamkang Journal of Science and Engineering8(3), pp.197-202
    DOI: 10.6180/jase.2005.8.3.03
    Appears in Collections:[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article

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