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    題名: Optical properties of self assembled GaN polarity inversion domain boundary
    作者: Liu, M. C.;Cheng, Y. J.;Chang, J. R.;Hsu, S. C.;Chang, C. Y.
    貢獻者: 淡江大化學工程與材料工程學系
    日期: 2011-07
    上傳時間: 2011-10-18 21:44:53 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.
    關聯: Applied Physics Letters 99(2), 021103(3pages)
    DOI: 10.1063/1.3610449
    顯示於類別:[化學工程與材料工程學系暨研究所] 期刊論文

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