English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62796/95837 (66%)
Visitors : 3640362      Online Users : 377
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/62459


    Title: Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding
    Authors: Chen, Y. J.;Chang, C. C.;Lin, H. Y.;Hsu, S. C.;Liu, C. Y.
    Contributors: 淡江大學化學工程與材料工程學系
    Date: 2012-02
    Issue Date: 2011-10-18 21:31:12 (UTC+8)
    Publisher: Kidlington: Pergamon
    Abstract: Vertical thin-GaN LED was successfully fabricated on the GaN LED epi-layers grown on the patterned-sapphire substrate with the pyramidal pattern by low-temperature Cu/Sn/Ag wafer bonding at 150 °C. An inverted pyramidal pattern formed on the n-GaN surface after the GaN epi-layer was transferred onto Si wafer, which resulted from the pyramidal pattern on the patterned-sapphire substrate. The inverted pyramidal pattern has an equivalent function with roughening the n-GaN surface. With higher inverted pyramidal pattern coverage, the light extraction efficiency can be greatly enhanced. In addition, we found that the 4-fold increase (from 13.6% to 53.8%) in the pyramidal pattern coverage on patterned-sapphire substrate only gives the GaN LED epi-layer about 5.7% enhancement in the internal quantum efficiency.
    Relation: Microelectronics Reliability 52(2), pp.381–384
    DOI: 10.1016/j.microrel.2010.11.010
    Appears in Collections:[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML343View/Open
    Microelectronics Reliability 2010.pdf700KbAdobe PDF2View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback