Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films

淡江大學機構典藏 > 理學院 > 化學學系暨研究所 > 期刊論文 > Item 987654321/61588

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題名:	Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
作者:	王文竹
貢獻者:	淡江大學化學學系
關鍵詞:	A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence
日期:	2005-07-01
上傳時間:	2011-10-15 23:19:31 (UTC+8)
摘要:	We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
關聯:	Materials Research Bulletin 40(10), pp.1757-1764
DOI:	10.1016/j.materresbull.2005.05.009
顯示於類別:	[化學學系暨研究所] 期刊論文

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