淡江大學機構典藏:Item 987654321/61586
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    题名: Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon film
    作者: 王文竹
    贡献者: 淡江大學化學學系
    日期: 2004-11
    上传时间: 2011-10-15 23:19:20 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C–Hn structure and Si–Hn bonds, which causes the Young’s modulus and hardness of the films to decrease with the increase of the Si content.
    關聯: Applied Physics Letters 85(18), pp.4022-4024
    DOI: 10.1063/1.1812594
    显示于类别:[化學學系暨研究所] 期刊論文

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