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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/61586


    Title: Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon film
    Authors: 王文竹
    Contributors: 淡江大學化學學系
    Date: 2004-11
    Issue Date: 2011-10-15 23:19:20 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C–Hn structure and Si–Hn bonds, which causes the Young’s modulus and hardness of the films to decrease with the increase of the Si content.
    Relation: Applied Physics Letters 85(18), pp.4022-4024
    DOI: 10.1063/1.1812594
    Appears in Collections:[Graduate Institute & Department of Chemistry] Journal Article

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