In this study, an effective deposition of copper sulfide (Cux(x = 1,2)S) on the PAN film was proposed by an electroless deposition method with the reduction agents NaHSO3 and Na2S2O3 · 5H2O and chelating agents (ethylenediaminetetraacetic acid, EDTA and triethanolamine, TEA). The mechanism of the Cux(x = 1,2)S growth and the electromagnetic interference shielding effectiveness (EMI SE) of the Cux(x = 1,2)S/PAN films were studied. It was found that the vinyl acetate monomer residue in the PAN substrate would be purged due to the swelling effect by EDTA and TEA solution. And then, the anchoring effect occurred due to the hydrogen bonding between the pits of the PAN substrate and the chelating agent. The swelling degree (Sd) was proposed and evaluated from the FT-IR spectra. The relationship between swelling degree of the PAN films and EDTA concentration(C) is expressed as: Sd = 0.13 + 0.90 × eˆ(−15.15CEDTA). And TEA series is expressed as: Sd = 0.07 + 1.00 × eˆ(−15.15CTEA). On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 nm to 383 nm when the concentration of EDTA increased from 0.00 M to 0.20 M. Consequently, the EMI SE of the Cux(x = 1,2)S/PAN films increased from 10∼12 dB to 25∼27 dB. The GIA-XRD analyzer indicated that the deposited layer consisted of CuS and Cu2S.
