A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator

機構典藏 > College of Engineering > Graduate Institute & Department of Electrical Engineering > Journal Article > Item 987654321/60827

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/60827

Title:	A Sub-1V Fourth-Order Bandpass Delta-Sigma Modulator
Authors:	Chang, Hsiang-hui;Kuo, Chien-hung;Liu, Ming-huang;Liu, Shen-Iuan
Contributors:	淡江大學電機工程學系
Keywords:	Low-voltage;Switched-capacitor;Bandpass delta-sigma modulator;Two-path structure
Date:	2003-12
Issue Date:	2013-05-31 11:44:18 (UTC+8)
Publisher:	Norwell: Kluwer Academic Publishers
Abstract:	A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm2.
Relation:	Analog Integrated Circuits and Signal Processing 37(3), pp.179-189
DOI:	10.1023/A:1026265624740
Appears in Collections:	[Graduate Institute & Department of Electrical Engineering] Journal Article

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	241	View/Open