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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/60372


    Title: Fabrication of high-power InGaN-based light-emitting diode chips on pyramidally patterned sapphire substrate
    Authors: 許世杰;Chen, Y. J.;Kuo, C. H.;Tun, C. J.;Chen, Y. J.
    Contributors: 淡江大學化學工程與材料工程學系
    Date: 2010-02
    Issue Date: 2011-10-13 22:32:57 (UTC+8)
    Relation: Jpn. J. Appl. Phys. 49, 020201
    Appears in Collections:[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

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