Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/58312

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题名:	Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures
其它题名:	伍采結構之自旋分裂與共振自旋電晶體
作者:	Wang, Wan-Tsang;Wu, C. L.;Chiang, J. C.;Lo, I-Kai;Kao, H. F.;Hsu, Y. C.;Pang, W. Y.;Jang, D. J.;Lee, Meng-En;Chang, Yia-Chung;Chen, Chun-Nan
贡献者:	淡江大學物理學系
日期:	2010-10
上传时间:	2011-09-30 22:03:14 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	Spin-splitting energies of wurtzite AlN and InN are calculated using the linear combination of atomic orbital method, and the data are analyzed utilizing the two-band k⋅p model. It is found that in the k⋅p scheme, a spin-degenerate surface exists in the wurtzite Brillouin zone. Consequently, the D’yakonov-Perel’ spin relaxation mechanism can be effectively suppressed for all spin components in the [001]-grown wurtzite quantum wells (QWs) at a resonant condition through application of appropriate strain or a suitable gate bias. Therefore, wurtzite QWs (e.g., InGaN/AlGaN and GaN/AlGaN) are potential structures for spintronic devices such as the resonant spin lifetime transistor.
關聯:	Journal of Applied Physics 108(8), 083718(4pages)
DOI:	10.1063/1.3484042
显示于类别:	[物理學系暨研究所] 期刊論文

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