Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/58302

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题名:	Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films
作者:	Joseph, P. T.;Tai, N. H.;Lin, I-Nan
贡献者:	淡江大學物理學系
日期:	2010-06
上传时间:	2011-09-30 22:01:39 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	We report monolithic n-type conductivity on low-temperature (＜570 °C) grown ultrananocrystalline diamond (UNCD) films by Li-diffusion (about 255 nm) from LiNbO3 substrates. Low resistivity of 1.2 Ω cm with carrier concentration of −2×1020 cm−3 is obtained on freestanding UNCD films. The films bonded to Cu-tape show very low turn-on field of 4.2 V/μm with emission current density of above 0.3 mA/cm2 at a low applied filed of 10 V/μm. The n-type conductivity of low-temperature Li-diffused UNCD films overwhelms that of the high-temperature (≥800 °C) nitrogen doped ones and will make a significant impact to diamond-based electronics.
關聯:	Applied Physics Letters 97(4), 042107(3pages)
DOI:	10.1063/1.3472204
显示于类别:	[物理學系暨研究所] 期刊論文

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