English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 56804/90523 (63%)
造訪人次 : 12094223      線上人數 : 40
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/58296


    題名: Enhanced electron field emission properties by tuning the microstructure of ultrananocrystalline diamond film
    作者: Cheng, Hsiu-fung;Chiang, Horng-yi;Horng, Chuang-chi;Chen, Huang-chin;Wang, Chuan-sheng;Lin, I-nan
    貢獻者: 淡江大學物理學系
    日期: 2011-02
    上傳時間: 2011-09-30 22:00:38 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: Synthesis of microcrystalline-ultrananocrystalline compositediamond (MCD-UNCD) films, which exhibit marvelous electron field emission (EFE) properties, was reported. The EFE of MCD-UNCD compositediamondfilm can be turned on at a low field as 6.5 V/μm and attain large EFE current density about 1.0 mA/cm2 at 30 V/μm applied field, which is better than the EFE behavior of the nondoped planar diamondfilms ever reported. The MCD-UNCD films were grown by a two-step microwave plasma enhanced chemical vapor deposition (MPECVD) process, including forming an UNCD layer in CH4/Ar plasma that contains no extra H2, followed by growingMCD layer using CH4/H2/Ar plasma that contains large proportion of H2. Microstructure examinations using high resolution transmission electron microscopy shows that the secondary MPECVD process modifies the granular structure of the UNCD layer, instead of forming a large grain diamond layer on top of UNCDfilms. The MCD-UNCD compositediamondfilms consist of numerous ultrasmall grains (∼5 nm in size), surrounding large grains about hundreds of nanometer in size. Moreover, there exist abundant nanographites in the interfacial region between the grains that were presumed to form interconnected channels for electron transport, resulting in superior EFE properties for MCD-UNCD compositefilms.
    關聯: Journal of Applied Physics 109(3), 033711(8pages)
    DOI: 10.1063/1.3544482
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    1.3544482.pdf3779KbAdobe PDF417檢視/開啟
    index.html0KbHTML162檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋