淡江大學機構典藏:Item 987654321/58292
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62830/95882 (66%)
造访人次 : 4079405      在线人数 : 694
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/58292


    题名: Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films
    作者: Sekhar Chandra Ray;Sarit Kumar Ghosh;Zivayi Chiguvare;Umesh Palnitkar;Pong, Way-Faung;Lin, I-Nan;Pagona Papakonstantinou;André Michael Strydom
    贡献者: 淡江大學物理學系
    日期: 2010
    上传时间: 2011-09-30 21:59:59 (UTC+8)
    摘要: In this work we demonstrate that the field emission characteristics of disordered Si-doped diamond-like carbon (DLC) thin films depend not only on properties of the conductive clustered sp2 phase and the insulating sp3 matrix (or sp2/sp3 ratio) but also on the presence of Si–Hn and C–Hn species in the film. The presence of such species reduces the hardness of the film and simultaneously enhances the field emission performance. A turn on electric field (ETOF) of 6.76 V/µm produced a field emission current density of ∼0.2 mA/cm2, when an electric field of ∼20 V/µm was applied. The Fowler–Nordheim (FN) tunneling model is appropriate to explain the field emission mechanism only within limited range of the current density. However, it is found that there is an apparent crossover between space charge limited current (SCLC) and the Frenkel effect due to impurities incorporated during the fabrication of Si-DLC films. This combined effect (SCLC + Frenkel) allows for the emission of electrons from the top of the reduced barriers due to the formation of comparatively soft DLC:Si films. The emission also occurs through tunneling from one conductive cluster (sp2 C=C) to another separated by an insulating matrix (sp3 C–C) after reducing the effective depth of a trap on application of high electric field.
    關聯: Japanese Journal of Applied Physics 49, 111301(6pages)
    DOI: 10.1143/JJAP.49.111301
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films.pdf544KbAdobe PDF1检视/开启
    index.html0KbHTML78检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈