淡江大學機構典藏:Item 987654321/58292
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62830/95882 (66%)
Visitors : 4102283      Online Users : 714
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/58292


    Title: Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films
    Authors: Sekhar Chandra Ray;Sarit Kumar Ghosh;Zivayi Chiguvare;Umesh Palnitkar;Pong, Way-Faung;Lin, I-Nan;Pagona Papakonstantinou;André Michael Strydom
    Contributors: 淡江大學物理學系
    Date: 2010
    Issue Date: 2011-09-30 21:59:59 (UTC+8)
    Abstract: In this work we demonstrate that the field emission characteristics of disordered Si-doped diamond-like carbon (DLC) thin films depend not only on properties of the conductive clustered sp2 phase and the insulating sp3 matrix (or sp2/sp3 ratio) but also on the presence of Si–Hn and C–Hn species in the film. The presence of such species reduces the hardness of the film and simultaneously enhances the field emission performance. A turn on electric field (ETOF) of 6.76 V/µm produced a field emission current density of ∼0.2 mA/cm2, when an electric field of ∼20 V/µm was applied. The Fowler–Nordheim (FN) tunneling model is appropriate to explain the field emission mechanism only within limited range of the current density. However, it is found that there is an apparent crossover between space charge limited current (SCLC) and the Frenkel effect due to impurities incorporated during the fabrication of Si-DLC films. This combined effect (SCLC + Frenkel) allows for the emission of electrons from the top of the reduced barriers due to the formation of comparatively soft DLC:Si films. The emission also occurs through tunneling from one conductive cluster (sp2 C=C) to another separated by an insulating matrix (sp3 C–C) after reducing the effective depth of a trap on application of high electric field.
    Relation: Japanese Journal of Applied Physics 49, 111301(6pages)
    DOI: 10.1143/JJAP.49.111301
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat
    Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films.pdf544KbAdobe PDF1View/Open
    index.html0KbHTML78View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback