淡江大學機構典藏:Item 987654321/58289
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 64178/96951 (66%)
Visitors : 9673969      Online Users : 6071
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/58289


    Title: Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films
    Authors: Chen, Huang-Chin;Teng, Kuang-Yau;Tang, Chen-Yau;Sundaravel, Balakrishnan;Amirthapandian, Sankarakumar;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Date: 2010-10
    Issue Date: 2011-09-30 21:59:29 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: The effect of 2.245 GeV Au-ion irradiation/postannealing processes on the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films was investigated. Au-ion irradiation with a fluence of around 8.4×1013 ions/cm2 is required to induce a large improvement in the EFE properties of the UNCD films. Postannealing the Au-ion irradiated films at 1000 °C for 1 h slightly degraded the EFE properties of the films but the resulting EFE behavior was still markedly superior to that of pristine UNCD films. Transmission electron microscopy examinations revealed that the EFE properties of the UNCD films are primarily improved by Au-ion irradiation/postannealing processes because of the formation of nanographites along the trajectory of the irradiating ions, which results in an interconnected path for electron transport. In contrast, the induction of grain growth process due to Au-ion irradiation in UNCD films is presumed to insignificantly degrade the EFE properties for the films as the aggregates are scarcely distributed and do not block the electron conducting path.
    Relation: Journal of Applied Physics 108(12), 123712(7pages)
    DOI: 10.1063/1.3524541
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat
    1.3524541.pdf3470KbAdobe PDF438View/Open
    index.html0KbHTML273View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback