Effect of CH4/H2 plasma ratio on ultra-low friction of nano-crystalline diamond coating deposited by MPECVD technique

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/58288

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題名:	Effect of CH4/H2 plasma ratio on ultra-low friction of nano-crystalline diamond coating deposited by MPECVD technique
作者:	林諭男;Sharma, Neha;Kumar, N.;Sundaravel, B.
貢獻者:	淡江大學物理學系
關鍵詞:	Nano-crystalline diamond;Dangling bonds;Coefficient of friction
日期:	2011-02-01
上傳時間:	2011-09-30 21:59:20 (UTC+8)
摘要:	Nano-crystalline diamond coatings were deposited on the silicon substrate using Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD). Experiments were performed by varying the H2 content in CH4/H2 plasma during synthesis. Raman spectral analysis revealed that with decrease in hydrogen content in the CH4 plasma, the ID/IG ratio decreases with the formation of smaller crystallites. Such a film possesses a large grain boundary fraction containing hydrogenated amorphous carbon (a-C:H). During tribological test, sufficient amount of hydrogen present in the grain boundary passivates the dangling σ-bond causing ultra-low friction and extremely low wear evident by improvement in microstructure.
關聯:	Tribology International
DOI:	10.1016/j.triboint.2011.03.028
顯示於類別:	[物理學系暨研究所] 期刊論文

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