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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/58286

    Title: Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process
    Authors: Cheng, Hsiu-Fung;Chen, Yu-Wen;Joseph, P.T.;Hung, Chuan-Chic;Chiang, Horng-Yi;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Keywords: Films;Dielectric properties;Ferroelectric properties;Optical properties;Perovskites;Pulsed laser deposition
    Date: 2010-01
    Issue Date: 2011-09-30 21:59:01 (UTC+8)
    Publisher: London: Elsevier Ltd
    Abstract: The 0.6[0.94Pb(Zn1/3Nb2/3)O3 + 0.06BaTiO3] + 0.4[0.48(PbZrO3) + 0.52(PbTiO3)], PBZNZT, thin films were synthesized by pulsed laser deposition (PLD) process. The PBZNZT films possess higher insulating characteristics than the PZT (or PLZT) series materials due to the suppressed formation of defects, therefore, thin-film forms of these materials are expected to exhibit superior ferroelectric properties as compared with the PZT (or PLZT)-series thin films. Moreover, the Ba(Mg1/3Ta2/3)O3 thin film of perovskite structure was used as buffer layer to reduce the substrate temperature necessary for growing the perovskite phase PBZNZT thin films. The PBZNZT thin films of good ferroelectric and dielectric properties (remanent polarization Pr = 26.0 μC/cm2, coercive field Ec = 399 kV/cm, dielectric constant K = 737) were achieved by PLD at 400°C. Such a low substrate temperature technique makes this process compatible with silicon device process. Moreover, thus obtained PBZNZT thin films also possess good optical properties (about 75% transmittance at 800 nm). These results imply that PBZNZT thin films have potential in photonic device applications.
    Relation: Journal of the European Ceramic Society 30(2), pp.447-451
    DOI: 10.1016/j.jeurceramsoc.2009.09.002
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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