English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62567/95223 (66%)
Visitors : 2523498      Online Users : 37
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/58285

    Title: Defect structure for the ultra-nanocrystalline diamond films synthesized in H2-containing Ar/CH4 plasma
    Authors: Chen, Huang-Chin;Wang, Chuan-Sheng;Lin, I-Nan;Cheng, Hsiu-Fung
    Contributors: 淡江大學物理學系
    Keywords: UNCD;TEM microstructure;Diamond flakes
    Date: 2011-03
    Issue Date: 2011-09-30 21:58:51 (UTC+8)
    Abstract: The modification on the microstructure of diamond films due to the addition of H2 species into the Ar/CH4 plasma was investigated. While the Ar/CH4 plasma produced UNCD films with equiaxed grains (about 5 nm in size), the (Ar-H2)/CH4 plasma produced acicular-shaped grains (about 5 × 20 nm in size). Transmission electron microscopy studies indicate that these acicular-shaped grains actually are agglomerates of diamond flakes, which contain stacking faults lying on the (111) lattice plane. Presumably, the incorporation of H2 species in the plasma leads to partial etching of hydrocarbons adhered onto the diamond clusters, such that the C2- (or active carbon) species contained in the plasma can attach to the diamond surface anisotropically, leading to diamond flakes. The incorporation of H2 in Ar plasma can also suppress the formation of i-carbons, an allotropic phase of diamonds. The critical proportion of H2 in Ar plasma for inducing the changes in the granular structure is around 0.03%. The proportion of grain boundaries was thus reduced and the electron field emission properties of the materials were thus degraded. However, the suppression of the film electrical conductivity without sacrificing the smooth surface characteristic has the applications as high-thermal-conductivity heat spreaders and substrates for surface-acoustic-wave devices.
    Relation: Diamond and Related Materials 20(3), pp.368–373
    DOI: 10.1016/j.diamond.2011.01.024
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback