Change of Structural Behaviors of Organo-Silane Exposed Graphene Nanoflakes

doi:10.1021/jp9121563

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/58283

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题名:	Change of Structural Behaviors of Organo-Silane Exposed Graphene Nanoflakes
作者:	Pao, C. W.;Ray, S. C.;Tsai, H. M.;Chen, Y. S.;Chen, H.-C.;Lin, I.-N.;Pong, W. F.;Chiou, J. W.;Tsai, M.-H.;Shang,N. G.;Papakonstantinou,P.;Guo, J.-H.
贡献者:	淡江大學物理學系
日期:	2010
上传时间:	2013-06-13 11:23:33 (UTC+8)
出版者:	Washington, DC: American Chemical Society
摘要:	The electronic structures of graphene nanoflakes (GNFs) exposed to an organo-silane precursor [tetramethylsilane, TMS, Si(CH3)4] were studied using electron field emission (EFE), Raman spectroscopy, X-ray absorption near-edge structure (XANES), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES), and first-principles calculation. The results of XANES, XPS, and Raman spectroscopy indicate that the silyl radical strong covalent bonds were formed in GNFs, which induced local structural relaxations and enhanced sp3 hybridization. Comparison of calculated electronic structure, XANES, and XES spectra of Sitreated GNFs suggests that the Si atom substitutes one 3-fold coordinated C atom in a given graphene layer and relaxes outward to form sp3 bonding with another C atom in the adjacent graphene layer. The EFE measurements show an increase in the turn-on electric field with the increase of the Si content, which suggests an enhancement of the nonmetallic sp3 bonding
關聯:	The Journal of Physical Chemistry C 114(18), pp.8161-8166
DOI:	10.1021/jp9121563
显示于类别:	[物理學系暨研究所] 期刊論文

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