晶胞內反非對稱性對Wurtzite材質之光元件的光學性質之影響

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Research Paper > Item 987654321/54299

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/54299

Title:	晶胞內反非對稱性對Wurtzite材質之光元件的光學性質之影響
Other Titles:	Intra-Cell Inversion Asymmetry Effect on Optical Properties of Wurtzite-Based Optical Devices
Authors:	陳俊男
Contributors:	淡江大學物理學系
Keywords:	反非對稱性;纖維鋅礦(六角體);光場非等向性;壓電現象與焦電現象;LED 燈具;Inversion asymmetry;Wurtzite (hexagonal);Optical-field anisotropy;piezoelectricity and pyroelectricity;LED lamp
Date:	2010
Issue Date:	2011-07-05 23:39:53 (UTC+8)
Abstract:	我之前發表的文獻(JAP 101, 046105 (2007))：已經使用『進階的 k•p 閃鋅(zincblende)理論架構』，去證明四角體鍵(tetragonal bonds)之反非對稱性，其對閃鋅材料量子井的光躍遷之影響。結果顯示，此反非對稱性引起明顯的光強度非等向性之變化。在此研究計畫：首先建立『進階的 k•p 纖維鋅礦(wurtzite)理論架構』。接著，此理論架構將被應用去探討此纖維鋅礦六角體結構(hexagonal structure)之反非對稱性，其對纖維鋅礦材料量子井的光躍遷之影響。明顯地，此反非對稱性對纖維鋅礦材料裝置，將引起明顯的光強度非等向性之變化，此現象是被肯定預期地。在此研究計畫：六角體結構之反非對稱性，其對纖維鋅礦量子井之光躍遷的非等向性 (anisotropy)作用，將被『進階的 k•p 纖維鋅礦(wurtzite)理論架構』來探討，此進階的理論架構不僅包含晶胞間(inter-cell)的光作用計算，而且也包含晶胞內(intra-cell)的光作用計算。不像，『傳統的 k•p 纖維鋅礦(wurtzite)理論架構』只包含晶胞間(inter-cell)的光作用計算。纖維鋅礦材料結構是非中心對稱性(non-centrosymmetric) (也就是說, 缺乏反對稱性)。因此，纖維鋅礦材料也必有壓電現象(piezoelectricity)與焦電現象(pyroelectricity)，那是缺乏中心對稱性晶體的必然結果。本研究計畫，也將探討壓電現象與焦電現象對纖維鋅礦(wurtzite)材料元件之光場強度分佈的影響。氮化鎵與其相關(GaN-related) 的纖維鋅礦半導體，其為白光LED 裝置的主要材料。在此研究計畫：六角體結構之反非對稱性，其對纖維鋅礦材料元件之光非等向性(anisotropy) 作用，其必定是發白光LED 裝置之光場分佈圖案的重要影響因素。光場的分佈圖案，其對LED 照明設備之設計是如此的重要，因而必須詳細加以探討。 In my previous paper (JAP 101, 046105 (2007)) had employed an enhanced k•p zincblende framework to examine the effect of the inversion asymmetry of the tetragonal bonds on the optical transitions in zincblende semiconductor quantum wells. The results have shown that asymmetry effects cause an obvious variation in the optical-strength anisotropy. In this project, an enhanced k•p wurtzite framework will be firstly developed, which is then employed to explore the effect of the inversion asymmetry of the hexagonal structure on the optical transitions in wurtzite semiconductor quantum wells. Obviously, it is expected that the results will also be shown that asymmetry effects cause an obvious variation in the optical-strength anisotropy on the wurtzite devices. In this project, the influence of the bulk inversion asymmetry (hexagonal) on the optical anisotropy in wurtzite quantum wells will be analyzed using an enhanced k•p wurtzite framework 『which takes not only inter-cell interactions but also intra-cell interactions into account』. Significantly, this effect can not be revealed by the conventional k•p wurtzite formalism, 『which considers inter-cell interactions only』. The wurtzite structure is non-centrosymmetric (i.e., lacks inversion symmetry). Due to this, wurtzite crystals can (and generally do) have properties such as piezoelectricity and pyroelectricity, which centrosymmetric crystals lack. The effects of the piezoelectricity and pyroelectricity on the optical-field strength will also be studied in this project. The GaN-related wurtzite semiconductor is the primary materials on the white-light LED devices. Due to the phenomenon of the inversion asymmetry inside the hexagonal structure, the inversion asymmetry results in the optical anisotropy which should be one of the important effects on the optical-field pattern of the white-light LED chips. The optical-field pattern is so important for the design of the illumination lamp of the white-light LED.
Appears in Collections:	[Graduate Institute & Department of Physics] Research Paper

Files in This Item:

There are no files associated with this item.

Loading...