Apparatus of Ion Sensitive Thin Film Transistor and Method of Manufacturing of the Same

淡江大學機構典藏 > 工學院 > 化學工程與材料工程學系暨研究所 > 專利 > Item 987654321/53825

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/53825

题名:	Apparatus of Ion Sensitive Thin Film Transistor and Method of Manufacturing of the Same
作者:	蔡子萱;Tsai, Tzu-hsuan;Wu, Yung-fu
贡献者:	淡江大學化學工程與材料工程學系
日期:	2004-12-03
上传时间:	2011-05-20 15:34:37 (UTC+8)
摘要:	The present invention discloses an apparatus of ion sensitive thin film transistor and method of manufacturing of the same. The apparatus of the invention, formed on a glass substrate, comprises an ion detector, formed on said glass substrate, including a plurality of ion sensitive transistors and a signal processor with display, also formed on said glass substrate, being coupled with said ion detector. The signal processor with display further comprises a circuit of signal processing, a driver circuit, and a display, wherein by means of the method of Low Temperature PolySilicon, i.e. LTPS technology, the invention integrates said ion detector and said signal processor with display on said glass substrate to become an tiny, light and thin apparatus with portable and disposable characteristics.
显示于类别:	[化學工程與材料工程學系暨研究所] 專利

文件中的档案:

档案	大小	格式	浏览次数
US20060035400.pdf	137Kb	Adobe PDF	323	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章