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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/53825


    Title: Apparatus of Ion Sensitive Thin Film Transistor and Method of Manufacturing of the Same
    Authors: 蔡子萱;Tsai, Tzu-hsuan;Wu, Yung-fu
    Contributors: 淡江大學化學工程與材料工程學系
    Date: 2004-12-03
    Issue Date: 2011-05-20 15:34:37 (UTC+8)
    Abstract: The present invention discloses an apparatus of ion sensitive thin film transistor and method of manufacturing of the same. The apparatus of the invention, formed on a glass substrate, comprises an ion detector, formed on said glass substrate, including a plurality of ion sensitive transistors and a signal processor with display, also formed on said glass substrate, being coupled with said ion detector. The signal processor with display further comprises a circuit of signal processing, a driver circuit, and a display, wherein by means of the method of Low Temperature PolySilicon, i.e. LTPS technology, the invention integrates said ion detector and said signal processor with display on said glass substrate to become an tiny, light and thin apparatus with portable and disposable characteristics.
    Appears in Collections:[化學工程與材料工程學系暨研究所] 專利

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