English  |  正體中文  |  简体中文  |  Items with full text/Total items : 63187/95884 (66%)
Visitors : 4568495      Online Users : 261
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/53703

    Title: Fabrication of thin-GaN LED structures by Au-Si wafer bonding
    Authors: Hsu, S. C.;Liu, C. Y.
    Contributors: 淡江大學化學工程與材料工程學系
    Date: 2006
    Issue Date: 2011-05-20 09:56:05 (UTC+8)
    Publisher: Pennington, N.J. : Electrochemical Society
    Abstract: Using Au-Si wafer bonding and laser lift-off (LLO) techniques, an light emitting diode (LED) GaN epi layer was successfully transferred onto a Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The Raman spectra results show that the quality of the transferred GaN epi layer did not change; the initial compressive stress level of the GaN epi layer was relieved by 202 MPa after transferring. The transferred GaN epi layer was further processed for use in a thin-GaN LED device. The luminance-intensity-current voltage curve results indicate a forward voltage of 3.4 V, and a luminance intensity of 204 mcd at 20 mA.
    Relation: Electrochemical and solid-state letters 9(5), pp.171-173
    DOI: 10.1149/1.2181293
    Appears in Collections:[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

    Files in This Item:

    File SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback