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    题名: Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
    作者: Lo, M.-H.;Tu, P.-M.;Wang, C.-H.;Cheng, Y.-J.;Hung, C.-W.;Hsu, S.-C.;Kuo, H.-C.;Zan, H.-W.;Wang, S.-C.;Chang, C.-Y.;Liu, C.-M.
    贡献者: 淡江大學化學工程與材料工程學系
    日期: 2009-12
    上传时间: 2011-05-20 09:55:45 (UTC+8)
    出版者: American Institute of Physics
    摘要: A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1×109 to 4×107 cm-2. The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
    關聯: Applied Physics Letters 95(21), 211103
    DOI: 10.1063/1.3266859
    显示于类别:[化學工程與材料工程學系暨研究所] 期刊論文

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