Stress relaxation in GaN by transfer bonding on Si substrates

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题名:	Stress relaxation in GaN by transfer bonding on Si substrates
作者:	Hsu, S. C.;Pong, B. J.;Li, W. H.;Beechem, Thomas E., III;Graham, Samuel;Liu, C. Y.
贡献者:	淡江大學化學工程與材料工程學系
关键词:	III-V semiconductors;Quantum wells;III-V semiconductors;Quantum wells;Elasticity and anelasticity;stress-strain relations;III-V;II-VI semiconductors
日期:	2007-12
上传时间:	2011-05-20 09:54:50 (UTC+8)
出版者:	American Institute of Physics
摘要:	The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ~85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.
關聯:	Applied Physics Letters 91(25), 251114 (3 pages)
DOI:	10.1063/1.2821224
显示于类别:	[化學工程與材料工程學系暨研究所] 期刊論文

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