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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/53673


    Title: Stress relaxation in GaN by transfer bonding on Si substrates
    Authors: Hsu, S. C.;Pong, B. J.;Li, W. H.;Beechem, Thomas E., III;Graham, Samuel;Liu, C. Y.
    Contributors: 淡江大學化學工程與材料工程學系
    Keywords: III-V semiconductors;Quantum wells;III-V semiconductors;Quantum wells;Elasticity and anelasticity;stress-strain relations;III-V;II-VI semiconductors
    Date: 2007-12
    Issue Date: 2011-05-20 09:54:50 (UTC+8)
    Publisher: American Institute of Physics
    Abstract: The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ~85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.
    Relation: Applied Physics Letters 91(25), 251114 (3 pages)
    DOI: 10.1063/1.2821224
    Appears in Collections:[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

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