English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 63187/95884 (66%)
造访人次 : 4568429      在线人数 : 251
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/53671


    题名: Effect of Cu content on interfacial reactions between Sn(Cu) alloys and Ni/Ti thin-film metallization
    作者: Hsu, S. C.;Wang, S. J.;Liu, C. Y.
    贡献者: 淡江大學化學工程與材料工程學系
    关键词: Pb-free solder;thin film UBM;interfacial reaction;Cu diffusivity
    日期: 2003-01-01
    上传时间: 2011-05-20 09:54:46 (UTC+8)
    出版者: Springer Boston
    摘要: The effect of Cu content in Sn(Cu) alloys on the interfacial reaction between Ni thin film and Sn(Cu) alloys has been investigated. We have found that the variation of Cu content has a strong influence on the spalling of the Ni thin film. With small Cu additives in the Sn, spalling was deferred to longer reflowing time. When the Cu content increased to about 1.0 wt.%, a layer of Cu-Sn compound formed on the Ni thin film, and no spalling was observed after 20-min reflowing. The possible mechanism of spalling deferring is proposed. A Cu flux from the solder to the interface compensated the ripening flux of the semispherical compound grains; therefore, spalling was retarded. The driving force of the Cu flux was attributed to the reduction of Cu solubility caused by the presence of Ni at the interface of the Ni thin film. The Cu flux from solder to the interface is calculated to be in the same order with the ripening flux of the Cu6Sn5 compound grains, which confirms the proposed mechanism of spalling deferring. For the Sn(Cu) alloys having Cu content over 1.0 wt.%, the Cu-Sn compound layer grew so fast that the surface of the interfacial compound layer was free of Ni. There was no Cu flux to compensate the ripening flux; therefore, the ripening flux dominated, and spalling occurred after a short reflowing time.
    關聯: Journal of Electronic Materials 32(11), pp.1214-1221
    DOI: 10.1007/s11664-003-0014-5
    显示于类别:[化學工程與材料工程學系暨研究所] 期刊論文

    文件中的档案:

    档案 大小格式浏览次数
    index.html0KbHTML227检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈