淡江大學機構典藏:Item 987654321/52732
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62830/95882 (66%)
造访人次 : 4040154      在线人数 : 1022
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/52732


    题名: Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films
    作者: 林諭男;Lin, I-nan;Chou, Yi-Ping;Chen, Tong T.
    贡献者: 淡江大學物理學系
    关键词: Co-doped Diamond Films;Electron Field Emission Properties;Current Image Tunneling Spectroscopy
    日期: 2003-09
    上传时间: 2010-12-01 10:26:49 (UTC+8)
    出版者: 臺北縣：淡江大學
    摘要: Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (Eg = 1.62 eV) and largest emission ratio, as compared with that of other diamond films. These diamond films can be turned on at smallest electric field (Eo = 6.4 V/μm), exhibiting largest field emission capacity (Je = 1,500 μA/cm2).
    關聯: 淡江理工學刊=Tamkang journal of science and engineering 6(3)，頁139-144
    DOI: 10.6180/jase.2003.6.3.02
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films.pdf1025KbAdobe PDF118检视/开启
    index.html0KbHTML79检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈