Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films

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Title:	Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films
Authors:	林諭男;Lin, I-nan;Chou, Yi-Ping;Chen, Tong T.
Contributors:	淡江大學物理學系
Keywords:	Co-doped Diamond Films;Electron Field Emission Properties;Current Image Tunneling Spectroscopy
Date:	2003-09
Issue Date:	2010-12-01 10:26:49 (UTC+8)
Publisher:	臺北縣：淡江大學
Abstract:	Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (Eg = 1.62 eV) and largest emission ratio, as compared with that of other diamond films. These diamond films can be turned on at smallest electric field (Eo = 6.4 V/μm), exhibiting largest field emission capacity (Je = 1,500 μA/cm2).
Relation:	淡江理工學刊=Tamkang journal of science and engineering 6(3)，頁139-144
DOI:	10.6180/jase.2003.6.3.02
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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