Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (Eg = 1.62 eV) and largest emission ratio, as compared with that of other diamond films. These diamond films can be turned on at smallest electric field (Eo = 6.4 V/μm), exhibiting largest field emission capacity (Je = 1,500 μA/cm2).
淡江理工學刊=Tamkang journal of science and engineering 6(3)，頁139-144