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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/5266


    Title: 超奈米微晶鑽石(UNCD)薄膜之場發射特性研究(I)
    Other Titles: Studies on Electron Field Properties of Ultra Nano-Crystalline Diamond (UNCD) Films(I)
    Authors: 林諭男
    Contributors: 淡江大學物理學系
    Keywords: 超奈米微晶鑽石薄膜;場發射特性
    Date: 2004
    Issue Date: 2009-03-16 12:00:19 (UTC+8)
    Abstract: 「超奈米微晶鑽石(UNCD)薄膜」之特性是鑽石晶粒小於50 nm,且sp2-鍵結之含量必須小於5%。它擁有鑽石薄膜之各種優越特性,但是薄膜表面非常光滑,且製程溫度低於攝氏500度,與矽半導體元件製程相容,具有無限的應用潛力。 本子計劃「超奈米微晶鑽石(UNCD)薄膜之場發射特性研究」目標在探討具有超奈米晶粒,即晶粒小於50 nm,之鑽石薄膜的合成技術及其場發射特性:為改進傳統氣相合成法(CVD)合成鑽石薄膜的二個困難-即孕核不易與晶粒成長過快-本研究將利用雷射剝鍍法先在矽基板上形成sp3之碳原子團(cluster)作為奈米晶粒鑽石之孕核晶種,利用高密度晶核抑制大顆晶粒之形成。並在成長期間施加偏壓及嚴格控制氣體成分避免晶粒成長,探討超奈米微晶鑽石(UNCD)薄膜之成長機制。除此之外,將利用硼(或氮)的添加,增加奈米微晶鑽石之導電率,以改進其場發射特性,探討「超奈米微晶鑽石(UNCD)薄膜」之電子場發射機制,開發超奈米微晶鑽石(UNCD)薄膜之場發射電子源。
    Appears in Collections:[物理學系暨研究所] 研究報告

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