本研究主要是利用微波電漿化學汽相沉積系統中用純氫氣、氬氣與氮氣的三種氣氛下沉積鑽石薄膜並在製成過程中，用光發射光譜(opical emission spectropy) 觀察電漿成分及變化，藉此討論電漿與成長鑽石薄膜的關聯性。(i)在甲烷/氫氣電漿中主要是成長出0.5-1um柱狀的鑽石結構也發現隨著壓力變化，大晶粒比例開始變多,而且非鑽石之碳物種以外其他物種比例也開始變多。(ii)在甲烷/氬氣電漿中可成長出2-10 nm的超奈米球鑽石結構。壓力變化下雖然表面形貌與內部結構都相似，但是以150 torr的表面形貌看起來較密集。(iii)在甲烷/氮氣電漿中成功的長出鑽石薄膜，其結構為50-100 nm針狀鑽石結構。另外，也發現2-10 nm的超奈米球結構，在80 torr以後有發現參雜效果增加，在氮氣電漿會產生參雜的效果，導致在氮氣電漿成長之鑽石薄膜有較好的場發射特性。 This research discussed to growth behaviar of diamond films in methane /argon, methane/hydrogen or methane/nitrogen plasma by MPCVD (microwave plasma chemical vapor depositon)。We examined the optical emission spectrum as to investigate the correlation between plasma and characteristics of diamond films。(i)With methane/hydrogen plasma, we obtianed columnar like diamond films which grain size about 0.5~1 um, besides We found that the relative proportion of larger grains and non-diamond carbonspecies is increasing with pressure。(ii)With methane/argon plasma, we obtained ultrananocrystalline diamond film count grain size about 2~10 nm. With methane/nitrogen plasma, we obrained acicular diamond films crystalline grain size about 50-100 nm, coexisting with the ultrananocrystalline diamond grains with size about 2~10 nm。In addition, we found acicular diamond grains in 80 torr, where the doping effect operating。The diamond films have better field emission value due to doping effect in the methane and nitrogen plasma。
