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    题名: Deposition rate effect of Alq3 thin film growth: A kinetic Monte Carlo study
    作者: Lin, Yih-jiun;Chang, Jian-chuang;Tai, Chin-kuen;王伯昌;Wang, Bo-cheng;Li, Feng-yin
    贡献者: 淡江大學化學學系
    日期: 2008-01-01
    上传时间: 2010-08-10 15:18:57 (UTC+8)
    出版者: CSIRO Publishing
    摘要: Applying the Kinetic Monte Carlo (KMC) technique, we successfully investigated the effect of deposition rate on the growth pattern of an Alq3 thin film. In good agreement with experimental results, our simulation results indicate that there exists a transition growth in terms of the deposition rate that corresponds to the transition between the island growth and random deposition growth. In the regions of island growth (where the deposition rate is lower than 1.1 Å s–1) and random deposition growth (where the deposition rate is higher than 3 Å s–1), the surface morphology is not suitable for luminant devices because of a high roughness, a larger inner vacancy ratio at higher deposition rate, and low homogeneity at lower deposition rate conditions. Within the transition growth region (deposition rate is between 1.1 and 3.0 Å s–1), the homogeneity of the film surface improves as the deposition rate increases. Not only does the pattern of the island structures become blurred, but the inner vacancy ratio and surface roughness also remain low as the deposition rate increases. From our results, there may exist a deposition rate to optimize the Alq3 film with a suitable surface morphology for luminant devices.
    關聯: Australian Journal of Chemistry 61(8), pp.600-609
    DOI: 10.1071/CH08099
    显示于类别:[化學學系暨研究所] 期刊論文


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