淡江大學機構典藏:Item 987654321/50352
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/50352


    Title: Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer
    Authors: Lo, Ikai;Pang, Wen-yuan;Chen, Yen-liang;Hsu, Yu-chi;Chiang, Jih-chen;Lin, Wei-hsin;Chiu, Wan-ting;Tsai, Jenn-kai;陳俊男;Chen, Chun-nan
    Contributors: 淡江大學物理學系
    Keywords: aluminium compounds;focused ion beam technology;gallium compounds;III-V semiconductors;nanowires;semiconductor heterojunctions;semiconductor quantum wires;Shubnikov-de Haas effect;spin-orbit interactions;wide band gap semiconductors
    Date: 2008-09
    Issue Date: 2010-08-09 15:47:34 (UTC+8)
    Publisher: American Institute of Physics (AIP)
    Abstract: The authors thank M. H. Gau, C. H. Hsieh, C. C Yang, R. Y. Su, and C. H. Chen for their assistance. The project was supported by National Science Council and Core Facilities Laboratory in Kaohsiung-Pingtung Area, Taiwan. The authors are also grateful to W. C. Mitchel and M. Mah for their help and AFOSR/AOARD, USAF for financial support under Grant No. FA4869-07-1-4022.
    An Al0.18 Ga0.82 N/GaN heterostructure was used to fabricate a ballistic nanowire with a wire width of 200 nm by focused ion beam. We observed the beating Shubnikov-de Haas oscillations in the nanowire with a spin-splitting energy of (2.4±0.3) meV. Based on the results, we proposed a spin-Hall quantum-ring interferometer made of Alx Ga1-x N/GaN nanowires for spintronic applications. © 2008 American Institute of Physics.
    Relation: Applied Physics Letters 93(13), pp.132114(3 pages)
    DOI: 10.1063/1.2995866
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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