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https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/50352
题名:
Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer
作者:
Lo, Ikai
;
Pang, Wen-yuan
;
Chen, Yen-liang
;
Hsu, Yu-chi
;
Chiang, Jih-chen
;
Lin, Wei-hsin
;
Chiu, Wan-ting
;
Tsai, Jenn-kai
;
陳俊男
;
Chen, Chun-nan
贡献者:
淡江大學物理學系
关键词:
aluminium compounds
;
focused ion beam technology
;
gallium compounds
;
III-V semiconductors
;
nanowires
;
semiconductor heterojunctions
;
semiconductor quantum wires
;
Shubnikov-de Haas effect
;
spin-orbit interactions
;
wide band gap semiconductors
日期:
2008-09
上传时间:
2010-08-09 15:47:34 (UTC+8)
出版者:
American Institute of Physics (AIP)
摘要:
The authors thank M. H. Gau, C. H. Hsieh, C. C Yang, R. Y. Su, and C. H. Chen for their assistance. The project was supported by National Science Council and Core Facilities Laboratory in Kaohsiung-Pingtung Area, Taiwan. The authors are also grateful to W. C. Mitchel and M. Mah for their help and AFOSR/AOARD, USAF for financial support under Grant No. FA4869-07-1-4022.
An Al0.18 Ga0.82 N/GaN heterostructure was used to fabricate a ballistic nanowire with a wire width of 200 nm by focused ion beam. We observed the beating Shubnikov-de Haas oscillations in the nanowire with a spin-splitting energy of (2.4±0.3) meV. Based on the results, we proposed a spin-Hall quantum-ring interferometer made of Alx Ga1-x N/GaN nanowires for spintronic applications. © 2008 American Institute of Physics.
關聯:
Applied Physics Letters 93(13), pp.132114(3 pages)
DOI:
10.1063/1.2995866
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[物理學系暨研究所] 期刊論文
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