| 摘要: | 當矽材質場效電晶體逐漸接近它的尺度極限時，許多奈米尺度的結構因之而被廣泛的研 究。因此，必須要包含量子效應的程式模擬工具才符合需要。本計劃使用一種嚴謹且實 用的近似法，去模擬奈米尺度電子元件之量子傳輸現象。本計劃使用的近似法是建基於 非平衡格林函數(NEFG)型式。NEFG 快速的被大部分的人接受，成為奈米電子元件之量 子傳輸分析計算工具。 本計劃，我們使用NEFG 方法去分析一些目前產學界正在研究的奈米尺度元件，諸如： double-gate FET，triple-gate FET，finFET，gate-all-round FET，and nano-wire FET，等等。 再者， 本計劃採用sp3d5s* tight-binding 方法當成能帶計算工具，原因是：(1)它包含整 體能帶效應，(2)它使用原子格子點(grid)，(3)它可很直接的應用於奈米結構元件。因此， 本計劃建立出一個奈米電子模擬器，其包含三維與整體能帶效應。 本計劃的目的是：(1) 建立一個具有物理意涵且適當方法的奈米電子模擬器，(2)發展用 於量子裝置的電腦輔助工具軟體，(3) 探討奈米電子元件的傳輸特性，(4) 設計高效能 的奈米電子元件。 As the conventional silicon MOSFET approaches its scaling limits, many nano-scale structures are being extensively explored. Therefore, it will require the simulation tools to include quantum effects to study devices in this region. This project presents a rigorous yet practical approach to model quantum transport in nano-scale electronic devices. Our approach is based on the non-equilibrium Green’s function (NEFG) formalism which is rapidly gaining acceptance as the method of choice to treat quantum transport in nanostructures. In this project, we will use this NEFG method to treat a few nanoscale devices of current interest, namely, double-gate FET, triple-gate FET, finFET, gate-all-round FET, and nano-wire FET, etc. Moreover, the sp3d5s* tight-binding method is chosen as bandstructure model because (1) it reproduce the whole bandstructure effect, (2) it uses an atomic grid, and (3) its extension to nanostructures is straightforward. Therefore, a three-dimensional full band simulator for nanoelectronics is then presented in this project. The objectives of this project are: (1) to implement the appropriate physics and methodology for nanoscale device modeling, (2) to develop new TCAD (technology computer aided design) tools for quantum scale device simulation, (3) to examine and assess new features of carrier transport in futuristic nanoscale devices, and (4) to design the high-performance nanoelectronic devices. |
