淡江大學機構典藏:Item 987654321/46382
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 64176/96941 (66%)
Visitors : 9106521      Online Users : 12497
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/46382


    題名: Characteristics of proton-exchanged wet etching on z-cut nickel-indiffused lithium niobate
    作者: 張文清;Chang, Wen-ching;Chang, Shih-jung;Sue, Chao-yung;Hsu, Chia-lu
    貢獻者: 淡江大學電機工程學系
    日期: 1998-07-01
    上傳時間: 2010-03-26 22:12:11 (UTC+8)
    出版者: Wiley-Blackwell
    摘要: In this letter, the wet etching technique is utilized to determine the proton exchange (PE) depth of z-cut nickel-indiffused lithium niobate under different nickel indiffusion parameters. It is demonstrated that the existence of nickel atoms reduces the PE depth. While this result was applied to the fabrication of a ridge-type waveguide, the tilt angle of the sidewall on the ridge waveguide was about 70°, which has been successfully increased. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 250–252, 1998.
    關聯: Microwave and optical technology letters 18(4), pp.250-252
    DOI: 10.1002/(SICI)1098-2760(199807)18:4<250::AID-
    顯示於類別:[Graduate Institute & Department of Electrical Engineering] Journal Article

    文件中的檔案:

    檔案 大小格式瀏覽次數
    0KbUnknown288檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋