淡江大學機構典藏:Item 987654321/45827
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62822/95882 (66%)
造访人次 : 4018627      在线人数 : 1048
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/45827


    题名: CMOS microelectromechanical bandpass filters
    作者: 楊龍杰;Yang, Lung-jieh;Huang, Tsung-wei;Chang, Pei-zen
    贡献者: 淡江大學機械與機電工程學系
    关键词: Microelectromechanical filter;CMOS;Maskless;Monolithic integration
    日期: 2001-05-01
    上传时间: 2010-03-26 20:05:35 (UTC+8)
    出版者: Elsevier
    摘要: This work fabricates a laminated-suspension microelectromechanical filter, respectively, by a fully compatible CMOS 0.6 μm single poly triple metal (SPTM) process and CMOS 0.35 μm single poly quadri-metal (SPQM) process. Experimentally, due to the top metal layer being used as the etch-resistant mask during the subsequent dry etching. Therefore, this study performs maskless etching with plasma and obtains excellent results including high selectivity and full release of the structure. Additionally, the microelectromechanical filter can be driven by applying low-voltage of around 5 V and a measured center frequency of around 13.1 kHz and a quality factor of around 1871 were obtained for a single-comb resonator operated in air. The filter successful proposed herein has a monolithic integration capability with the relative electric circuits in the standard CMOS 0.35 μm process.
    關聯: Sensors and Actuators A: Physical 90(1-2), pp.148-152
    DOI: 10.1016/S0924-4247(01)00451-4
    显示于类别:[機械與機電工程學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    0KbUnknown408检视/开启
    CMOS microelectromechanical bandpass filters.pdf644KbAdobe PDF1检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈