CMOS microelectromechanical bandpass filters

機構典藏 > College of Engineering > Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering > Journal Article > Item 987654321/45827

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/45827

Title:	CMOS microelectromechanical bandpass filters
Authors:	楊龍杰;Yang, Lung-jieh;Huang, Tsung-wei;Chang, Pei-zen
Contributors:	淡江大學機械與機電工程學系
Keywords:	Microelectromechanical filter;CMOS;Maskless;Monolithic integration
Date:	2001-05-01
Issue Date:	2010-03-26 20:05:35 (UTC+8)
Publisher:	Elsevier
Abstract:	This work fabricates a laminated-suspension microelectromechanical filter, respectively, by a fully compatible CMOS 0.6 μm single poly triple metal (SPTM) process and CMOS 0.35 μm single poly quadri-metal (SPQM) process. Experimentally, due to the top metal layer being used as the etch-resistant mask during the subsequent dry etching. Therefore, this study performs maskless etching with plasma and obtains excellent results including high selectivity and full release of the structure. Additionally, the microelectromechanical filter can be driven by applying low-voltage of around 5 V and a measured center frequency of around 13.1 kHz and a quality factor of around 1871 were obtained for a single-comb resonator operated in air. The filter successful proposed herein has a monolithic integration capability with the relative electric circuits in the standard CMOS 0.35 μm process.
Relation:	Sensors and Actuators A: Physical 90(1-2), pp.148-152
DOI:	10.1016/S0924-4247(01)00451-4
Appears in Collections:	[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article

Files in This Item:

File	Description	Size	Format
		0Kb	Unknown	410	View/Open
CMOS microelectromechanical bandpass filters.pdf		644Kb	Adobe PDF	1	View/Open