A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide

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题名:	A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide
作者:	Dai, Ching-liang;Peng, Hsuan-jung;Liu, Mao-chen;Wu, Chyan-chyi;Hsu, Heng-ming;楊龍杰;Yang, Lung-jieh
贡献者:	淡江大學機械與機電工程學系
关键词:	microwave switch;CMOS;post-process
日期:	2005
上传时间:	2010-03-26 19:50:04 (UTC+8)
出版者:	Japan Society of Applied Physics
摘要:	In this study, we investigate the fabrication of a micromachined microwave switch using the commercial 0.35 μm double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process of only one maskless wet etching. The post-process has merits of easy execution and low cost. The post-process uses an etchant (silox vapox III) to etch the silicon dioxide layer to release the suspended structures of the microwave switch. The microwave switch is a capacitive type that is actuated by an electrostatic force. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch is about 17 V. The switch has an insertion loss of −2.5 dB at 50 GHz and an isolation of −15 dB at 50 GHz.
關聯:	Japanese Journal of Applied Physics 44(9A), pp.6804-6809
DOI:	10.1143/JJAP.44.6804
显示于类别:	[機械與機電工程學系暨研究所] 期刊論文

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