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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/45727


    Title: A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide
    Authors: Dai, Ching-liang;Peng, Hsuan-jung;Liu, Mao-chen;Wu, Chyan-chyi;Hsu, Heng-ming;楊龍杰;Yang, Lung-jieh
    Contributors: 淡江大學機械與機電工程學系
    Keywords: microwave switch;CMOS;post-process
    Date: 2005
    Issue Date: 2010-03-26 19:50:04 (UTC+8)
    Publisher: Japan Society of Applied Physics
    Abstract: In this study, we investigate the fabrication of a micromachined microwave switch using the commercial 0.35 μm double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process of only one maskless wet etching. The post-process has merits of easy execution and low cost. The post-process uses an etchant (silox vapox III) to etch the silicon dioxide layer to release the suspended structures of the microwave switch. The microwave switch is a capacitive type that is actuated by an electrostatic force. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch is about 17 V. The switch has an insertion loss of −2.5 dB at 50 GHz and an isolation of −15 dB at 50 GHz.
    Relation: Japanese Journal of Applied Physics 44(9A), pp.6804-6809
    DOI: 10.1143/JJAP.44.6804
    Appears in Collections:[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article

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