A piezoresistive micro pressure sensor fabricated by commercial DPDM CMOS process

淡江大學機構典藏 > 工學院 > 機械與機電工程學系暨研究所 > 期刊論文 > Item 987654321/45668

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題名:	A piezoresistive micro pressure sensor fabricated by commercial DPDM CMOS process
作者:	楊龍杰;Yang, Lung-jieh;Lai, Chen-chun;Dai,Ching-liang;Chang, Pei-zen
貢獻者:	淡江大學機械與機電工程學系
關鍵詞:	CMOS;MEMS;Post Process;Pressure Sensor
日期:	2005-03
上傳時間:	2010-03-26 19:43:18 (UTC+8)
出版者:	淡江大學
摘要:	A piezoresistive pressure sensor with a chip area of 2mm×4mm has been fabricated by a standard CMOS process with additional MEMS post- process. The structure layers follow the design rules of the CMOS 0.8μm DPDM (Double-Polysilicon-Double-Metal) multiple-project-wafer foundry service provided by the Chip Implementation Center, Taiwan. We used a finite element method software ANSYS to analyze the mechanical behavior of the pressure sensor and used the commercial software CADENCE to design the structure layout. After the CMOS process and the MEMS post- process, two CMOS pressure sensors with different diaphragm thickness were packaged and tested. The sensitivities of sensors were measured as 0.53 mV/atm/V and 13.1 mV/atm/V with non-linearity less than 5% (FSO), and agree with the theoretical prediction qualitatively.
關聯:	淡江理工學刊=Tamkang journal of science and engineering 8(1), pp.67-73
DOI:	10.6180/jase.2005.8.1.09
顯示於類別:	[機械與機電工程學系暨研究所] 期刊論文

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