淡江大學機構典藏:Item 987654321/42039
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62822/95882 (66%)
造访人次 : 4014951      在线人数 : 731
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/42039


    题名: Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation
    作者: Joseph, P.T.;Tai, N. H.;Niu, H.;Palnitkar, U. A.;Pong, W. F.;Cheng, H. F.;Lin, I-Nan
    贡献者: 淡江大學物理學系
    关键词: UNCD;Ion implantation;Electron field emission
    日期: 2008-07
    上传时间: 2010-02-23 14:27:18 (UTC+8)
    出版者: Lausanne: Elsevier S.A.
    摘要: Nitrogen (N) ion implantation induced modification on structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were reported. Low dose ion implantation slightly improved the EFE properties of UNCD films mainly due to the formation of defects and annealing brought the EFE parameters back to original state by eliminating the defects. Conversely, high dose ion implantation markedly enhanced the EFE properties for UNCD films possibly due to the induction of amorphous carbons for the UNCD films. The annealing process converts the amorphous phase into a more stable graphitic one such that the EFE properties persisted even after the annealing process.
    關聯: Diamond and Related Materials 17(7-10), pp.1812-1816
    DOI: 10.1016/j.diamond.2008.03.032
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 大小格式浏览次数
    index.html0KbHTML53检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈