Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation

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Title:	Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation
Authors:	Joseph, P.T.;Tai, N. H.;Niu, H.;Palnitkar, U. A.;Pong, W. F.;Cheng, H. F.;Lin, I-Nan
Contributors:	淡江大學物理學系
Keywords:	UNCD;Ion implantation;Electron field emission
Date:	2008-07
Issue Date:	2010-02-23 14:27:18 (UTC+8)
Publisher:	Lausanne: Elsevier S.A.
Abstract:	Nitrogen (N) ion implantation induced modification on structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were reported. Low dose ion implantation slightly improved the EFE properties of UNCD films mainly due to the formation of defects and annealing brought the EFE parameters back to original state by eliminating the defects. Conversely, high dose ion implantation markedly enhanced the EFE properties for UNCD films possibly due to the induction of amorphous carbons for the UNCD films. The annealing process converts the amorphous phase into a more stable graphitic one such that the EFE properties persisted even after the annealing process.
Relation:	Diamond and Related Materials 17(7-10), pp.1812-1816
DOI:	10.1016/j.diamond.2008.03.032
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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