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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42039

    Title: Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation
    Authors: Joseph, P.T.;Tai, N. H.;Niu, H.;Palnitkar, U. A.;Pong, W. F.;Cheng, H. F.;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Keywords: UNCD;Ion implantation;Electron field emission
    Date: 2008-07
    Issue Date: 2010-02-23 14:27:18 (UTC+8)
    Publisher: Lausanne: Elsevier S.A.
    Abstract: Nitrogen (N) ion implantation induced modification on structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were reported. Low dose ion implantation slightly improved the EFE properties of UNCD films mainly due to the formation of defects and annealing brought the EFE parameters back to original state by eliminating the defects. Conversely, high dose ion implantation markedly enhanced the EFE properties for UNCD films possibly due to the induction of amorphous carbons for the UNCD films. The annealing process converts the amorphous phase into a more stable graphitic one such that the EFE properties persisted even after the annealing process.
    Relation: Diamond and Related Materials 17(7-10), pp.1812-1816
    DOI: 10.1016/j.diamond.2008.03.032
    Appears in Collections:[物理學系暨研究所] 期刊論文

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