Synthesis of diamond using ultra-nanocrystalline diamonds as seeding layer and their electron field emission properties

doi:10.1016/j.diamond.2008.10.063

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42035

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题名:	Synthesis of diamond using ultra-nanocrystalline diamonds as seeding layer and their electron field emission properties
作者:	Wang, Chuan-Sheng;Chen, Huang-Chin;Cheng, Hsiu-Fung;Lin, I-Nan
贡献者:	淡江大學物理學系
关键词:	Growth;Electron field emission
日期:	2009-02
上传时间:	2010-02-23 14:25:24 (UTC+8)
出版者:	Lausanne: Elsevier S.A.
摘要:	A modified nucleation and growth process was adopted so as to improve the electron field emission (EFE) properties of diamonds films. In this process, a thin layer of ultra-nanocrystalline diamonds (UNCD), instead of bias-enhanced-nuclei, were used as nucleation layer for growing diamond films in H2-plasma. The morphology of the grains changes profoundly due to such a modified CVD process. The geometry of the grains transform from faceted to roundish and the surface of grains changes from clear to spotty. The Raman spectroscopies and SEM micrographs imply that such a modified diamond films consist of UNCD clusters (~ 10–20 nm in size) on top of sp3-bonded diamond grains (~ 100 nm in size). Increasing the total pressure in CVD chamber deteriorated the Raman structure and hence degraded the EFE properties of the films, whereas either increasing the methane content in the H2-based plasma or prolonged the growth time improved markedly the Raman structure and thereafter enhanced the EFE properties of diamond films. The EFE properties for the modified diamond films can be turned on at E0 = 11.1 V/μm, achieving EFE current density as large as (Je) = 0.7 mA/cm2 at 25 V/μm applied field.
關聯:	Diamond and Related Materials 18(2-3), pp.136-140
DOI:	10.1016/j.diamond.2008.10.063
显示于类别:	[物理學系暨研究所] 期刊論文

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