English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62805/95882 (66%)
造访人次 : 3864389      在线人数 : 285
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻

    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/42034

    题名: Electron field emission properties on UNCD coated Si-nanowires
    作者: Tzeng, Yu-fen;Lee, Yen-chih;Lee, Chi-young;Chiu, Hsin-tien;Lin, I-nan
    贡献者: 淡江大學物理學系
    关键词: Ultra-nano-crystalline diamond (UNCD);Silicon nanowires (SiNWs);Electron-field-emission (EFE)
    日期: 2008-04
    上传时间: 2010-02-23 14:24:48 (UTC+8)
    出版者: Lausanne: Elsevier S.A.
    摘要: The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE–CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE–CVD time interval for coating the UNCD films, attaining small turn-on field (E0 = 6.4 V/μm) and large emission current density (Je = 6.0 mA/cm2 at 12.6 V/μm). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E0)SiNWs = 8.6 V/μm and (Je)SiNWs < 0.01 mA/cm2 at the same applied field) and is comparable to those for carbon nanotubes.
    關聯: Diamond and Related Materials 17(4-5), pp.753-757
    DOI: 10.1016/j.diamond.2007.10.014
    显示于类别:[物理學系暨研究所] 期刊論文


    档案 大小格式浏览次数



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈