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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42034


    Title: Electron field emission properties on UNCD coated Si-nanowires
    Authors: Tzeng, Yu-fen;Lee, Yen-chih;Lee, Chi-young;Chiu, Hsin-tien;Lin, I-nan
    Contributors: 淡江大學物理學系
    Keywords: Ultra-nano-crystalline diamond (UNCD);Silicon nanowires (SiNWs);Electron-field-emission (EFE)
    Date: 2008-04
    Issue Date: 2010-02-23 14:24:48 (UTC+8)
    Publisher: Lausanne: Elsevier S.A.
    Abstract: The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE–CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE–CVD time interval for coating the UNCD films, attaining small turn-on field (E0 = 6.4 V/μm) and large emission current density (Je = 6.0 mA/cm2 at 12.6 V/μm). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E0)SiNWs = 8.6 V/μm and (Je)SiNWs < 0.01 mA/cm2 at the same applied field) and is comparable to those for carbon nanotubes.
    Relation: Diamond and Related Materials 17(4-5), pp.753-757
    DOI: 10.1016/j.diamond.2007.10.014
    Appears in Collections:[物理學系暨研究所] 期刊論文

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