Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/42033

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題名:	Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires
作者:	Tzeng, Yu-Fen;Lee, Chi-Young;Chiu, Hsin-Tien;Tai, Nyan-Hwa;林諭男;Lin, I-nan
貢獻者:	淡江大學物理學系
關鍵詞:	Electron field emission properties;Ultra-nano-crystalline diamond (UNCD);Silicon nanowires (SiNWs);UNCD nano-emitters
日期:	2008-07-01
上傳時間:	2010-02-23 14:24:18 (UTC+8)
出版者:	Elsevier
摘要:	Ultra-nano-crystalline diamond (UNCD) nano-emitters were prepared by coating UNCD films on the tip of silicon nanowire (SiNW) templates by microwave plasma-enhanced chemical vapor deposition process. The electron field emission properties of the UNCD/SiNW nano-emitters varied markedly with the pre-seeding process for the SiNW-templates. The direct ultrasonication process is more efficient in the formation of the diamond nuclei than the carburization/ultrasonication process, yielding UNCD/SiNWs nano-emitters with better electron field emission properties. The electron field emission can be turned on at (E0)UNCD/SiNW4 = 3.75 V/µm, yielding a large electron field emission current density of (Je)UNCD/SiNW4 = 11.22 mA/cm2 at an applied field of 9.75 V/µm. These characteristics are significantly better than those of bare SiNWs or planar UNCD films.
關聯:	Diamond and Related Materials 17(7-10), pp.1817-1820
DOI:	10.1016/j.diamond.2008.03.023
顯示於類別:	[物理學系暨研究所] 期刊論文

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