淡江大學機構典藏:Item 987654321/42033
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/42033


    Title: Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires
    Authors: Tzeng, Yu-Fen;Lee, Chi-Young;Chiu, Hsin-Tien;Tai, Nyan-Hwa;林諭男;Lin, I-nan
    Contributors: 淡江大學物理學系
    Keywords: Electron field emission properties;Ultra-nano-crystalline diamond (UNCD);Silicon nanowires (SiNWs);UNCD nano-emitters
    Date: 2008-07-01
    Issue Date: 2010-02-23 14:24:18 (UTC+8)
    Publisher: Elsevier
    Abstract: Ultra-nano-crystalline diamond (UNCD) nano-emitters were prepared by coating UNCD films on the tip of silicon nanowire (SiNW) templates by microwave plasma-enhanced chemical vapor deposition process. The electron field emission properties of the UNCD/SiNW nano-emitters varied markedly with the pre-seeding process for the SiNW-templates. The direct ultrasonication process is more efficient in the formation of the diamond nuclei than the carburization/ultrasonication process, yielding UNCD/SiNWs nano-emitters with better electron field emission properties. The electron field emission can be turned on at (E0)UNCD/SiNW4 = 3.75 V/µm, yielding a large electron field emission current density of (Je)UNCD/SiNW4 = 11.22 mA/cm2 at an applied field of 9.75 V/µm. These characteristics are significantly better than those of bare SiNWs or planar UNCD films.
    Relation: Diamond and Related Materials 17(7-10), pp.1817-1820
    DOI: 10.1016/j.diamond.2008.03.023
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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